| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BC847PN is a versatile NPN/PNP Silicon AF Transistor Array suitable for AF input stage and driver applications. This component offers high current gain and a low collector-emitter saturation voltage, contributing to efficient circuit operation.
Key electrical characteristics include a collector-emitter breakdown voltage of 45V for the BC847PN variant and 65V for the BC846PN/UPN variants. The maximum continuous collector current is rated at 100mA, with a peak collector current of 200mA for transient conditions. The device operates within a junction temperature range of -65°C to 150°C and has a total power dissipation of 250mW.
Packaged in a compact SOT363 (SC74) surface-mount case, the BC847PN is designed for ease of integration into various electronic designs. Its internal structure consists of two galvanically isolated NPN/PNP transistors, providing flexibility in circuit configurations. The transistor array is qualified according to AEC Q101 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) for the BC847PN is 45V.
The maximum continuous collector current (IC) is 100mA.
The typical DC current gain (hFE) at 2mA collector current and 5V VCE is 250.
The BC847PN is available in a SOT363 or SC74 package.
The storage temperature range is -65°C to 150°C.
