| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC856BW from Philips is a PNP bipolar junction transistor (BJT) suitable for general-purpose switching and amplification tasks. It is housed in a compact SOT-323 surface-mount plastic package.
Key electrical characteristics include a maximum collector current of 100 mA and a maximum collector-emitter voltage of 65 V. The transistor offers a typical transition frequency of 100 MHz at 100 mA collector current and -5 V collector-emitter voltage, making it suitable for various signal processing applications.
With a maximum power dissipation of 200 mW at 25°C ambient temperature and a wide operating temperature range from -65°C to 150°C, the BC856BW is designed for reliability. Its SOT-323 package is ideal for space-constrained designs requiring surface-mount components.
This transistor serves as a complementary NPN type to devices like the BC846W, BC847W, and BC848W, offering design flexibility within bipolar transistor circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC856BW is -65V.
The maximum continuous collector current (IC) for the BC856BW is -100mA.
The BC856BW transistor is supplied in a SOT-323 plastic package.
The typical transition frequency (fT) for the BC856BW is 100MHz.
The BC856BW can operate in an ambient temperature range of -65°C to 150°C.