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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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505 pcs
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505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Power Dissipation |
The BD537 from STMicroelectronics is an NPN silicon power bipolar transistor. It is designed to offer exceptional high gain performance coupled with very low saturation voltage.
Key electrical specifications include a collector-emitter voltage of 80V, a continuous collector current rating of 8A, and a maximum power dissipation of 50W. The transistor operates within a temperature range of -65°C to 150°C.
Packaged in a TO-220AB through-hole configuration, the BD537 is suitable for applications requiring robust power handling capabilities. Its polarity is NPN, and it has 3 terminals.
This transistor is part of the broader category of discrete semiconductor products, specifically falling under bipolar junction transistors. Its design makes it a reliable component for power switching and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 80V.
The maximum continuous collector current is 8A.
The BD537 uses a TO-220AB package.
The operating temperature range is -65°C to 150°C.
The polarity of the BD537 is NPN.
