| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD433 from STMicroelectronics is a silicon epitaxial-base NPN power transistor housed in a TO-126 plastic package. It is engineered for medium power linear and switching applications, with the BD433 variant being particularly suitable for car-radio output stages.
Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 45V and a continuous collector current (IC) of 4A. The transistor also offers a peak collector current (ICM) of 7A and a base current (IB) of 1A. Power dissipation (PC) is rated at 36W at 25°C case temperature, with a junction temperature (Tj) limit of 150°C.
This transistor exhibits a collector-emitter saturation voltage (VCEsat) of 0.6V maximum at 2A/0.2A and a base-emitter on voltage (VBE) of 1.2V maximum at 2A/1V. DC current gain (hFE) ranges from 30-130 at 10mA/5V and 85-140 at 0.5A/1V. The transition frequency (fT) is 3MHz at 250mA/1V.
Designed for through-hole mounting, the BD433 is a complementary type to BD434/436/438, making it suitable for various electronic designs requiring reliable power amplification and switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BD433 is 45V.
The maximum continuous collector current (IC) for the BD433 is 4A.
The BD433 transistor comes in a TO-126 package.
The maximum junction temperature (Tj) for the BD433 is 150°C.
The typical DC current gain (hFE-2) of the BD433 at IC=0.5A and VCE=1V is between 85 and 140.
