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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUW11AF from ST is a silicon NPN power transistor housed in a TO-3PN package. It is engineered for high voltage and high speed applications, making it suitable for use in converters, inverters, switching regulators, and motor control systems.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 450V and a collector current (IC) of 5A. The device also offers a peak collector current (ICM) of 10A and a base current (IB) of 2A. Its saturation voltage (VCEsat) is a maximum of 1.5V at specific test conditions, and the base-emitter saturation voltage (VBEsat) is a maximum of 1.4V.
Thermal performance is managed with a total power dissipation of 100W at 25°C case temperature and a thermal resistance from junction to mounting base of 1.25 K/W. The junction temperature is rated up to 150°C, with storage temperatures ranging from -65°C to 150°C.
The transistor exhibits a DC current gain (hFE) between 10 and 35 under specified conditions. Switching characteristics include a turn-on time of 1.0μs, a storage time of 4.0μs, and a fall time of 0.8μs for the BUW11AF variant under specific load conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BUW11AF is 450V when the base is open.
The continuous collector current (IC) rating for the BUW11AF is 5A.
The BUW11AF transistor comes in a TO-3PN package.
The maximum junction temperature (Tj) for this transistor is 150°C.
The BUW11AF is designed for applications such as converters, inverters, switching regulators, and motor control systems.
The thermal resistance from junction to mounting base (Rth j-mb) is 1.25 K/W.
The turn-on time (ton) for the BUW11AF with a resistive load is a maximum of 1.0μs.