2SJ278MYTR-E
Hitachi
The 2SJ278MYTR-E is a P-Channel MOSFET from Hitachi with a 60V drain-source breakdown voltage and 1A continuous drain current. It features a typical on-state resistance of 0.15 Ohms at VGS = -10V.
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109 pcs
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109 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD240 is a PNP silicon epitaxial-base power transistor manufactured by Texas Instruments, housed in a standard TO-220 plastic package. It is engineered for general-purpose medium power linear and switching applications.
Key electrical characteristics include a minimum DC Current Gain (hFE) of 40 at IC=-0.2A and a minimum Collector-Emitter Sustaining Voltage (VCEO(SUS)) of -100V. The transistor can handle a maximum Collector Current (IC) of 2A and has a maximum Collector-Emitter Voltage (VCE(max)) of 45V and a maximum Collector-Base Voltage (VCB) of 55V. Its Current Gain-Bandwidth Product (FT) is typically 200MHz.
This transistor is suitable for applications requiring amplification or switching of medium power signals. Its TO-220 package is designed for through-hole mounting, facilitating integration into various electronic circuits.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum DC Current Gain (hFE) for the BD240 is 40 at IC=-0.2A.
The minimum Collector-Emitter Sustaining Voltage (VCEO(SUS)) for the BD240 is -100V.
The maximum Collector Current (IC) for the BD240 is 2A.
The BD240 transistor is supplied in a TO-220 package.
The BD240 is intended for use in general purpose medium power linear and switching applications.