| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 15+PB | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Configuration | |
| Lead Style | |
| Material | |
| Mounting Type | |
| Package / Case | |
| SVHC Present |
The Toshiba TK80A04K3L is a high-performance Silicon N-Type Power MOSFET designed for various electronic applications. It boasts a drain-source breakdown voltage (BVDSS) of 40V and a maximum continuous drain current (ID) of 80A. The device exhibits a low on-resistance (RDS(ON)) of typically 0.0023Ω at VGS = 6V and TA = 25°C, with a maximum of 0.0035Ω.
This MOSFET is housed in a TO-220SIS package, a common through-hole configuration suitable for applications requiring moderate power dissipation. The maximum power dissipation (PD) is rated at 48W. Key electrical parameters include a total gate charge (QG) of 190nC, gate-source charge (QGS) of 127nC, and gate-drain charge (QGD) of 63nC.
Thermal management is supported by a junction-to-case thermal resistance (RthJC) of 3.125°C/W and a junction-to-ambient thermal resistance (RthJA) of 62.5°C/W. The component is specified as RoHS3 Compliant, MSL 1 Unlimited, and REACH Unaffected, though these compliance statuses are unverified.
The drain-source breakdown voltage is 40V minimum.
The continuous drain current is 80A maximum.
The on-resistance is 0.0023Ω typical and 0.0035Ω maximum at VGS = 6V and TA = 25°C.
The maximum power dissipation is 48W.
The TK80A04K3L is available in a TO-220SIS through-hole package with 3 pins.
The total gate charge is 190nC typical.
The thermal resistance is 62.5°C/W junction-to-ambient and 3.125°C/W junction-to-case.