| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD230 is an NPN power transistor manufactured by NXP Semiconductors, housed in a TO-126 (SOT32) plastic package. This component is suitable for applications requiring high current, with a maximum collector current of 1.5 A, and low voltage operation, up to 80 V.
Key electrical characteristics include a collector-emitter saturation voltage (VCEsat) of 0.8 V at 1 A and a base-emitter saturation voltage (VBEsat) of 1.2 V under the same conditions. The DC current gain (hFE) ranges from 40 to 250 at 150 mA and 2V VCE. The transition frequency (fT) is typically 125 MHz at 50 mA and 5V VCE.
With a total power dissipation of 12.5 W at 62 °C, and thermal resistance from junction to mounting base of 7 K/W, the BD230 is designed for moderate power applications. Its operating temperature range is -65 °C to +150 °C.
This transistor is often used in driver stages for television circuits. Its PNP complement is the BD231. The TO-126 package is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BD230 is 80 V.
The BD230 has a continuous collector current (IC) rating of 1.5 A.
The BD230 has a maximum power dissipation (Ptot) of 12.5 W at 62 °C.
The BD230 is supplied in a TO-126 (SOT32) plastic package.
The typical DC current gain (hFE) of the BD230 at 150 mA is between 40 and 250.
The transition frequency (fT) of the BD230 is typically 125 MHz.
