Mfr Part #:

2SC2570A

Mfr Name: NEC

The NEC 2SC2570A is an NPN Silicon Epitaxial Transistor designed for high-frequency, low-noise amplifier applications in VHF & UHF stages. It offers low noise and high gain characteristics.

✓ Total Stock: 5,050 pcs

$ Price Range: $0.24

2SC2570A Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	5,050 pcs On Request	5050 pcs	On Request	1	On Request	On Request	2009	On Request	On Request

2SC2570A Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	NEC
Junction Temperature	150 °C
Lead Style	Through-Hole
Mounting Type	Through Hole
SVHC Present	Not Present
Storage Temperature	-65 to +150 °C
Tape & Reel	True

View Similar Products (0)

2SC2570A Description

Short technical summary and product information.

The NEC 2SC2570A is an NPN Silicon Epitaxial Transistor specifically designed for use in Low Noise Amplifier (LNA) stages within VHF and UHF electronic circuits. This component excels in applications requiring both low noise and high gain.

Key electrical characteristics include a typical noise figure (NF) of 1.5 dB and a typical gain (Ga) of 8 dB at a frequency of 1.0 GHz, with a collector-emitter voltage (VCE) of 10 V and collector current (IC) of 5.0 mA. It also demonstrates a wide dynamic range, with NF of 1.9 dB and Ga of 9 dB at 1 GHz when operating at IC = 15 mA.

The transistor features a maximum collector-emitter voltage (VCEO) of 12 V and a maximum collector current (IC) of 70 mA. Its total power dissipation is rated at 600 mW at 25°C ambient temperature. The device is housed in a TO-92 package suitable for through-hole mounting.

With a typical gain bandwidth product (fT) of 5.0 GHz, the 2SC2570A is well-suited for various RF amplification tasks. Its absolute maximum ratings include a collector-to-base voltage (VCBO) of 25 V and a junction temperature up to 150°C.

2SC2570A Quick Information

Product Type: NPN Silicon Transistor

Series: 2SC2570A

Canonical Name: 2SC2570A NPN Silicon Epitaxial Transistor

Subcategory: RF Transistor

2SC2570A Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2SC2570A Estimated Pricing

Qty	Low	High
1+	$0.24	$0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC2570A Features

Designed for low noise amplifier stages.
Achieves 1.5 dB NF typical at 1 GHz.
Provides 8 dB gain typical at 1 GHz.
Rated for 12V collector-emitter voltage.
Housed in a TO-92 package.

2SC2570A Applications

Ideal for VHF and UHF amplifier circuits.
Suitable for low-noise RF front-end designs.
Used in RF oscillator applications.
Applicable in communication equipment.

2SC2570A FAQs

6 frequently asked questions generated from this part’s specifications.

What is the typical noise figure for the 2SC2570A transistor?

The typical noise figure (NF) for the 2SC2570A transistor is 1.5 dB at 1.0 GHz, 10 V VCE, and 5 mA IC.

What is the typical gain of the 2SC2570A transistor at 1 GHz?

The typical insertion power gain (|S21e|) for the 2SC2570A transistor is 10 dB at 1.0 GHz, with a minimum of 8 dB, under test conditions of 10 V VCE and 20 mA IC.

What is the maximum collector current for the 2SC2570A?

The maximum collector current (IC) for the 2SC2570A transistor is 70 mA.

What is the package type for the 2SC2570A transistor?

The 2SC2570A transistor is supplied in a TO-92 package.

What is the RoHS status of the 2SC2570A transistor?

The RoHS status for the 2SC2570A transistor is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the 2SC2570A transistor?

The Moisture Sensitivity Level (MSL) for the 2SC2570A transistor is 1 Unlimited.