| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
245 pcs
|
245 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Storage Temperature |
The BD132 is a PNP power transistor manufactured by NXP Semiconductors, housed in a TO-126 (SOT32) plastic package. This component is suitable for general purpose power applications.
Key electrical specifications include a collector-base voltage (VCBO) and collector-emitter voltage (VCEO) of up to 45V. The continuous collector current (IC) is rated at 3A, with a peak collector current (ICM) of 6A. The device offers a DC current gain (hFE) of at least 40 at -0.5A and -12V, and a transition frequency (fT) of 60 MHz at -0.25A and -5V.
Thermal characteristics are important for power applications. The BD132 has a total power dissipation (Ptot) of 15W at a mounting base temperature (Tmb) of 60°C. The thermal resistance from junction to mounting base (Rth j-mb) is 6 K/W, and from junction to ambient (Rth j-a) is 100 K/W under standard mounting conditions.
Operating temperature ranges from -65°C to +150°C for both storage and junction temperature. The component is specified with RoHS3 compliance and Moisture Sensitivity Level 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BD132 is 45V.
The continuous collector current (IC) for the BD132 is rated at 3A.
The total power dissipation (Ptot) for the BD132 is 15W at a mounting base temperature of 60°C.
The BD132 is supplied in a TO-126 / SOT32 plastic package.
The BD132 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BD132 is 1.
