BAT5406WH6327XTSA1
Infineon
The Infineon BAT5406WH6327XTSA1 is a silicon Schottky diode designed for low-loss, fast-recovery applications. It features a 30V reverse voltage rating and 200mA forward current.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,250 pcs
|
3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Storage Temperature |
The Infineon BCR112 is an NPN Silicon Digital Transistor suitable for various applications including switching circuits, inverters, interface circuits, and driver circuits. It is characterized by its built-in bias resistors (R1=4.7kΩ, R2=4.7kΩ).
This transistor offers a collector-emitter breakdown voltage (VCEO) of 50V and a maximum collector current (IC) of 100mA. The total power dissipation (Ptot) is up to 250mW, with a junction temperature (Tj) limit of 150°C and a storage temperature range of -65°C to 150°C.
The BCR112 has a DC current gain (hFE) of at least 20 at 5mA and a collector-emitter saturation voltage (VCEsat) of 0.3V maximum at 10mA. Its transition frequency (fT) is typically 140MHz at 10mA and 5V.
Packaged in a SOT23 surface-mount case, the BCR112 is designed for efficient integration into electronic designs requiring digital transistor functionality.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) is 100mA.
The minimum collector-emitter breakdown voltage (VCEO) is 50V at IC=100µA.
The BCR112 is available in a SOT23 surface-mount package.
The maximum total power dissipation (Ptot) is 250mW.
The typical transition frequency (fT) is 140MHz at IC=10mA, VCE=5V.