BAT5406WH6327XTSA1
Infineon
The Infineon BAT5406WH6327XTSA1 is a silicon Schottky diode designed for low-loss, fast-recovery applications. It features a 30V reverse voltage rating and 200mA forward current.
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1,867 pcs
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1867 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BCR112 is an NPN Silicon Digital Transistor manufactured by TECH PUBLIC. It is designed for applications such as switching circuits, inverters, interface circuits, and driver circuits. This transistor features built-in bias resistors (R1=4.7kΩ, R2=4.7kΩ).
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V, a collector current (IC) of up to 100mA, and a DC current gain (hFE) of at least 20 at 5mA. The collector-emitter saturation voltage (VCEsat) is a maximum of 0.3V at 10mA.
The BCR112 operates with an input voltage range of 1V to 2.5V for 'on' conditions and 0.8V to 1.5V for 'off' conditions. It has a typical transition frequency (fT) of 140MHz at 10mA and 5V, with a collector-base capacitance (Ccb) of 3pF at 10V.
This component is housed in a SOT23 surface-mount package. It has a maximum junction temperature of 150°C and a total power dissipation of 200mW for the BCR112 variant at TS ≤102°C. The storage temperature range is -65°C to 150°C.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is minimum 50V, collector-base voltage (VCBO) is 50V, and emitter-base voltage (VEBO) is 10V.
The BCR112 is available in a SOT23 surface mount package.
The junction temperature is maximum 150°C, and the storage temperature range is -65°C to 150°C.
The maximum collector current (IC) is 100mA.
The DC current gain (hFE) is minimum 20 at IC=5mA, VCE=5V.
The input resistor (R1) is typically 4.7kΩ, with a range of 3.2kΩ to 6.2kΩ.