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30,000 pcs
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30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BAT5406WH6327XTSA1 is a silicon Schottky diode suitable for applications requiring low-loss and fast-recovery characteristics, such as meter protection, bias isolation, and clamping. It offers a reverse voltage rating of 30V and a continuous forward current of 200mA.
Key electrical specifications include a maximum forward voltage of 800mV at 100mA, a maximum reverse current of 2µA at 25V, and a diode capacitance of 10pF at 1V and 1MHz. The reverse recovery time is rated at a maximum of 5ns.
This diode is qualified according to AEC Q101 and comes in a Pb-free package. The operating junction temperature is up to 150°C, with a storage temperature range of -65°C to 150°C. The component is housed in a surface-mount SOT23 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 30V.
The maximum forward current is 200mA.
The maximum forward voltage at 10mA is 400mV.
The reverse recovery time is a maximum of 5ns.
This diode is supplied in an SOT23 package.
The product is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.