| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,780 pcs
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7780 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 1825+ | On Request | On Request |
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The NXP Semiconductors BC856S is a Pnp bipolar transistor designed for surface mount applications. It comes in a compact SOT-363 package, suitable for space-constrained designs.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 65V and a maximum DC collector current of 0.1A. The transistor also features a gain bandwidth product (fT) of 100 MHz and a maximum power dissipation of 300 mW. The DC current gain (Hfe) is specified at a minimum of 110 at 2 mA and 5V.
This component operates within a wide temperature range, from -65°C to +150°C. The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1, indicating unlimited usability.
Its dual configuration and specific electrical characteristics make it suitable for various general-purpose amplification and switching applications where a Pnp transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC856S is 65V.
The maximum DC collector current for the BC856S is 0.1A.
The BC856S operates from a minimum temperature of -65°C to a maximum of +150°C.
The BC856S is supplied in a SOT-363 surface mount package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.