| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,013 pcs
|
30013 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC847ALT1 is an NPN silicon general purpose transistor manufactured by onsemi (formerly On Semiconductor). It is designed for low-power switching and amplification applications.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 45V, a collector-base voltage (VCBO) of 50V, and a continuous collector current rating of 100mA. The device offers DC current gain (hFE) options ranging from 110 to 520 depending on the gain group (A, B, or C), measured at standard test conditions.
The transistor is housed in a surface-mount SOT-23 package with gull wing leads, suitable for automated assembly. Thermal characteristics include a maximum power dissipation of 225mW on an FR-5 board and 300mW on an alumina substrate. The junction and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 4,537+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 45V.
The maximum continuous collector current (IC) is 100mA.
The BC847ALT1 is available in a SOT-23 surface mount package.
The junction and storage temperature range is -55°C to +150°C.
The DC current gain (hFE) ranges from 110 to 520 depending on the gain group (A, B, or C) and test conditions.
The datasheet indicates Pb-Free packages are available, but the RoHS status is unverified and should be confirmed with the manufacturer.
