2SA1586-GR,LF PNP bipolar transistor from Toshiba with maximum collector-emitter voltage of -50V and collector current of -150mA. Housed in a surface-mount SC-70 (SOT-323) package.
Mfr Part #:

2SA1586-GR,LF

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
PNP bipolar transistor from Toshiba with maximum collector-emitter voltage of -50V and collector current of -150mA. Housed in a surface-mount SC-70 (SOT-323) package.
Total Stock: 1,795 pcs
$ Price Range: $0.02 - $0.18

2SA1586-GR,LF Available from 1 distributor

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2SA1586-GR,LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Base Current
Collector Current (DC)
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (Typical @ Ic=-0.1 mA, Ic=-2 mA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Junction Temperature
Lead Style
Mounting Type
Noise Figure (NF)
Operating Temperature
Power
Power Dissipation
SVHC Present
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SA1586-GR,LF Description

Short technical summary and product information.

The Toshiba 2SA1586-GR,LF is a PNP epitaxial silicon bipolar junction transistor designed for low-frequency and audio frequency general-purpose amplifier applications. It features a maximum collector-emitter voltage (VCEO) of -50V and a maximum collector current (DC) of -150mA, with a power dissipation of 200mW.

 

This transistor offers a high DC current gain (hFE) with a minimum of 200 at Ic=-2mA and Vce=-6V, and excellent hFE linearity. It also provides low noise performance with a typical noise figure of 1dB. The device is complementary to the NPN 2SC4116.

 

The 2SA1586-GR,LF is supplied in a compact SC-70 (SOT-323) surface-mount package, suitable for automated assembly. The junction temperature range is -55°C to 150°C.

2SA1586-GR,LF Quick Information

Product Type: Bipolar Transistor
Canonical Name: Toshiba 2SA1586-GR,LF PNP Bipolar Transistor
Subcategory: PNP

2SA1586-GR,LF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2SA1586-GR,LF Estimated Pricing

Qty Low High
1+ $0.18 $0.18
10+ $0.11 $0.11
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.04 $0.04
3,000+ $0.03 $0.03
9,000+ $0.03 $0.03
24,000+ $0.02 $0.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA1586-GR,LF Features

  • PNP silicon epitaxial bipolar transistor.
  • Maximum collector-emitter voltage -50V.
  • Maximum collector current -150mA.
  • DC current gain (hFE) 200 minimum.
  • Surface-mount SC-70 (SOT-323) package.

2SA1586-GR,LF Applications

  • Low-frequency amplifier circuits.
  • Audio frequency general purpose amplification.
  • Signal processing in portable devices.

2SA1586-GR,LF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the 2SA1586-GR,LF?

The maximum collector-emitter voltage (VCEO) is -50V.

What is the package type for this transistor?

The package is SC-70 (SOT-323), a surface-mount package.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the 2SA1586-GR,LF RoHS compliant?

RoHS compliance is listed as RoHS3 Compliant but is unverified.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 200 at Ic=-2mA and Vce=-6V.

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