BC81716LT1 The ON Semiconductor BC81716LT1 is an NPN bipolar transistor designed for general-purpose applications. It offers a 50V breakdown voltage and a 500mA maximum collector current.
Mfr Part #:

BC81716LT1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor BC81716LT1 is an NPN bipolar transistor designed for general-purpose applications. It offers a 50V breakdown voltage and a 500mA maximum collector current.
✓ Total Stock: 22,700 pcs
$ Price Range: $0.99

BC81716LT1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
22,700 pcs
22700 pcs On Request 1 On Request On Request 03+ On Request On Request

BC81716LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Transistor Type

BC81716LT1 Description

Short technical summary and product information.

The BC81716LT1 from ON Semiconductor is a single NPN bipolar junction transistor (BJT). This component is designed for use in various electronic circuits requiring amplification or switching capabilities.

 

Key electrical characteristics include a maximum collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 500mA. These specifications make it suitable for a range of low-power applications.

 

As a discrete semiconductor product, the BC81716LT1 falls under the category of Bipolar Transistors - BJT - Single. Its specific application context would depend on the overall circuit design, but its ratings suggest utility in signal processing or power control within consumer electronics or industrial equipment.

 

Further details regarding package type, operating temperature range, and specific performance curves would typically be found in the manufacturer's datasheet.

BC81716LT1 Quick Information

Product Type: Bipolar Transistor - BJT
Series: BC817
Canonical Name: BC81716LT1 NPN Bipolar Transistor
Subcategory: Bipolar (BJT) - Single

BC81716LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC81716LT1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC81716LT1 Features

  • NPN bipolar junction transistor.
  • 50V collector-emitter breakdown voltage.
  • 500mA maximum collector current.
  • Designed for general electronic applications.

BC81716LT1 Applications

  • General purpose switching applications
  • Used in signal amplification circuits
  • Suitable for low power driver stages
  • Ideal for load switching up to 500mA
  • Common in consumer electronics designs

BC81716LT1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the BC81716LT1?

The maximum collector current for the BC81716LT1 is 500mA.

What is the collector-emitter breakdown voltage of the BC81716LT1?

The collector-emitter breakdown voltage of the BC81716LT1 is 50V.

What type of transistor is the BC81716LT1?

The BC81716LT1 is an NPN bipolar transistor.

What is the RoHS status of the BC81716LT1?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BC81716LT1?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

What is the REACH status for the BC81716LT1?

The REACH status is REACH Unaffected.

BC81716LT1 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
MMBT4401
MMBT4401
STMicroelectronics
The Venkel MMBT4401-EVL is an NPN bipolar transistor designed for surface mount applications. It offers a 40V collector-emitter breakdown voltage and 600mA maximum collector current.
View Part
2SC2712-GR
2SC2712-GR
Toshiba
The Toshiba 2SC2712-GR is an NPN bipolar transistor designed for surface mount applications. It offers a 50V collector-emitter breakdown voltage and 150mA maximum collector current.
View Part
2SC4116-GR
2SC4116-GR
Toshiba
The Toshiba 2SC4116-GR is an NPN bipolar junction transistor designed for various electronic applications. It features a 50V collector-emitter breakdown voltage and a 150mA maximum collector current.
View Part
RN1102
RN1102
Toshiba
The Toshiba RN1102,LXHF(CT is an NPN pre-biased bipolar transistor. It features a 50V collector-emitter voltage and 100mA collector current.
View Part
Home

Categories