Si2333DS-T1
Vishay
The Vishay Semiconductors Si2333DS-T1 is a P-Channel MOSFET with a 12V drain-source breakdown voltage and 4.1A continuous drain current. It is supplied in a SOT-23-3 package.
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693 pcs
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693 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC205B is a PNP transistor manufactured by Micro Electronics Corporation. This component is designed for special purpose applications and comes in a SOT-23 package.
Key electrical specifications include a maximum collector current of 0.1A and a minimum DC current gain (hFE) of 200. The maximum power dissipation is rated at 0.2W. The terminal finish is Tin/Lead (Sn/Pb).
This transistor is suitable for various electronic circuits requiring a PNP type transistor with these specific electrical characteristics. Its SOT-23 package makes it suitable for surface mount applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the BC205B is 0.1A.
The minimum DC current gain (hFE) for the BC205B is 200.
The maximum power dissipation for the BC205B is 0.2W.
The BC205B is supplied in a SOT-23 package.
The terminal finish of the BC205B is Tin/Lead (Sn/Pb).
The BC205B is a PNP transistor.
