| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
11,000 pcs
|
11000 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The Toshiba TPC8066-H is a single N-Channel MOSFET belonging to the TPC8062-H series. It is designed for electronic circuits requiring efficient switching and power handling.
Key electrical specifications include a continuous drain current of 11A and a drain-source resistance of 19 mOhms. The device has a power dissipation rating of 1.9W. Its mechanical dimensions are 3.9mm in width, 4.9mm in length, and 1.68mm in height, with a unit weight of 0.030018 oz.
This MOSFET is housed in a SOP-8 package and is suitable for surface mount technology (SMT) applications. The packaging is supplied on a reel.
Environmental compliance includes RoHS3 compliance, an MSL rating of 1, and REACH unaffected status. The technology used is Silicon (Si).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 11 A.
The power dissipation is 1.9 W.
The drain-source resistance is 19 mOhms.
The TPC8066-H MOSFET is supplied in a SOP-8 package.
The mounting style is SMD/SMT.
The TPC8066-H MOSFET is packaged on a Reel.
The RoHS status is RoHS3 Compliant.