| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,656 pcs
|
8656 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Alliance AS4C32M16D1-5BIN is a high-speed CMOS double data rate synchronous DRAM (DDR SDRAM) with a density of 512 Mbits. It is internally configured as a quad 8M x 16 DRAM, offering a 32M x 16-bit organization.
Key electrical specifications include a fast clock rate of 200MHz, enabling a data rate of 400Mbps/pin. It supports programmable CAS Latency options of 2, 2.5, and 3, along with programmable burst lengths of 2, 4, or 8. The device operates on a power supply of 2.5V ± 0.2V and features an SSTL_2 I/O interface.
This DDR1 SDRAM is housed in a 60-ball TFBGA package with dimensions of 8x13x1.2 mm (max). It is designed for surface mounting. The AS4C32M16D1-5BIN is specified for an industrial operating temperature range of -40°C to 85°C. It is also Pb-free and Halogen-free, adhering to RoHS and Halogen Free standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AS4C32M16D1-5BIN operates within an industrial temperature range of -40 to 85 °C.
The AS4C32M16D1-5BIN is housed in a 60-Ball TFBGA package.
The package dimensions for the AS4C32M16D1-5BIN are 8x13x1.2 mm.
The clock frequency of the AS4C32M16D1-5BIN is 200 MHz.
The AS4C32M16D1-5BIN has a data rate of 400 Mbps/pin.
The AS4C32M16D1-5BIN operates with a nominal power supply of 2.5 V.
Yes, the AS4C32M16D1-5BIN is Lead Free.