| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
401,778 pcs
|
401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| SVHC Present |
The Vishay SI4446DY is an N-Channel Power MOSFET featuring TrenchFET technology. It offers a drain-source voltage (VDS) of 40V and a low on-state resistance (RDS(on)) as low as 0.040 Ω at VGS = 10V and 0.045 Ω at VGS = 4.5V. This MOSFET is tested for 100% Rg and UIS.
Key electrical characteristics include a typical gate threshold voltage (VGS(th)) of 1.6V and a typical forward transconductance (gfs) of 18S. Dynamic parameters such as input capacitance (Ciss) are 700pF, output capacitance (Coss) are 76pF, and reverse transfer capacitance (Crss) are 45pF. The total gate charge (Qg) is typically 8nC.
The device is housed in a compact SO-8 package and is suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C. The SI4446DY is halogen-free according to IEC 61249-2-21 definition, making it a suitable choice for environmentally conscious designs.
Applications include CCFL inverters. The MOSFET's robust design and specifications make it a reliable component for power switching and control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40V.
The device is available in an SO-8 surface-mount package.
The operating junction temperature range is -55°C to +150°C.
The maximum continuous drain current at 25°C is 5.2A.
The typical drain-source on-resistance is 0.040Ω at Vgs=10V and 0.045Ω at Vgs=4.5V.
The typical gate-source threshold voltage is 1.6V.
The total gate charge is typically 8nC.