| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,100 pcs
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11100 pcs | On Request | 1 | On Request | On Request | 20+17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
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| Tape & Reel |
The AOS AON7611 is a 30V Complementary MOSFET that utilizes advanced trench technology to achieve superior RDS(ON) and reduced gate charge. This component is designed for use in inverter circuits and various other applications requiring efficient power switching.
Key electrical characteristics include a Drain-Source Voltage (VDS) of 30V and a Gate-Source Voltage (VGS) of ±20V. The N-channel configuration offers a continuous drain current of 9A with an RDS(ON) as low as 50mΩ at VGS = 10V. The P-channel configuration provides a continuous drain current of -18.5A with an RDS(ON) as low as 38mΩ at VGS = ±10V.
This MOSFET is housed in a compact DFN3x3A-8L surface-mount package, making it suitable for space-constrained designs. The device operates within a junction and storage temperature range of -55°C to 150°C. Its complementary nature allows for versatile integration into power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the N-channel configuration is 30V.
The typical on-resistance (RDS(ON)) for the N-channel AON7611 at VGS = 10V is less than 50mW.
The typical on-resistance (RDS(ON)) for the P-channel AON7611 at VGS = ±10V is less than 38mW.
The AON7611 is available in a DFN3x3A-8L package.
The AON7611 is a surface mount device.
The junction and storage temperature range for the AON7611 is -55°C to 150°C.
