BZX84-C3V3LT1GSOT23
On Semiconductor
The ON Semiconductor BZX84-C3V3LT1GSOT23 is a single Zener diode with a nominal Zener voltage of 3.3V. It is supplied in a surface-mount SOT-23 package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,644 pcs
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2644 pcs | On Request | 1 | On Request | On Request | 0+ | On Request | On Request | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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1,874 pcs
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1874 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type |
The AOD413A from AOS is a P-Channel MOSFET designed with advanced trench technology for excellent on-resistance and low gate charge. It features a Drain-Source Voltage (Vds) of -40V and a continuous Drain Current (Id) of -12A at 25°C.
Key electrical characteristics include a low Static Drain-Source On-Resistance (Rds(on)) of less than 44mΩ at VGS = -10V and 66mΩ at VGS = -4.5V. The device also exhibits a Gate Threshold Voltage (Vgs(th)) typically around -2V.
With a maximum junction temperature of 175°C and a Junction-to-Case thermal resistance of 3°C/W, the AOD413A is well-suited for applications requiring efficient thermal management. Its TO252 (DPAK) package allows for surface mounting.
This MOSFET is suitable for various applications including automotive, cloud computing, consumer electronics, and industrial motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -40V.
The AOD413A is available in a TO252 (DPAK) surface-mount package.
The junction and storage temperature range is -55°C to 175°C.
The continuous drain current is -12A at TC=25°C.
The maximum static drain-source on-resistance is 44mΩ at VGS=-10V and ID=-12A.
The gate threshold voltage is typically -2V, with a range of -1.7V to -3V at ID=-250mA.
The maximum power dissipation is 50W at TC=25°C.
