SI2302DS-HF
Vishay
The Vishay SI2302DS-HF is an N-Channel MOSFET in a SOT-23-3 package. It offers a 20V drain-source breakdown voltage and low on-resistance.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,100 pcs
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5100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AO4702 from AOS is a single N-Channel MOSFET designed for discrete semiconductor applications. It offers a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 12A at 25°C. The on-resistance (Rds(on)) is a low 0.01 Ohms at a gate-source voltage (Vgs) of 10V and a drain current of 12A, indicating efficient conduction.
With a gate-source threshold voltage (Vgs(th)) of 2.5V, the AO4702 is suitable for logic-level gate drive applications. The maximum gate-source voltage is rated at ±20V. Total gate charge (Qg) is typically 25nC at Vgs=10V, contributing to fast switching speeds.
This MOSFET operates within a temperature range of -55°C to +150°C. It is packaged in an 8-SOIC form factor, suitable for surface-mount assembly. The standard package quantity is 50 units. The component is RoHS3 compliant, REACH unaffected, and has a Moisture Sensitivity Level (MSL) of 1.
Key specifications include a 30V Vds, 12A Id, and low 0.01 Ohm Rds(on).
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V maximum.
12A at 25°C ambient temperature.
0.01 Ohms typical at Vgs=10V, Id=12A.
8-SOIC surface-mount package.
-55°C to +150°C.
2.5V nominal.
25nC typical at Vgs=10V.
