| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,205,000 pcs
|
1205000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay SI2302DS-HF is an N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 20V and a continuous drain current of up to 6A. The on-resistance is specified as 28 mOhm at a gate-source voltage of 4.5V, making it suitable for efficient power switching.
This MOSFET operates within a temperature range of -55°C to +150°C. It is housed in a compact SOT-23-3 surface-mount package, facilitating integration into space-constrained designs. The device is manufactured by Vishay, a recognized leader in discrete semiconductor components.
Key electrical characteristics include a typical gate charge of 8.8 nC at 4.5V VGS. The power dissipation is rated at 2.1W. Its construction and specifications make it a reliable choice for general-purpose switching and amplification tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The typical on-resistance is 28 mOhm at VGS = 4.5V and ID = 5A.
The continuous drain current is up to 6A.
The operating temperature range is -55°C to +150°C.
It is supplied in a SOT-23-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.