ALD111910SAL

Dual P-channel MOSFET with 20V drain-source voltage, 3.9A drain current, and low on-resistance of 27mΩ at 4.5V. Housed in a compact 9-DSBGA package.

The NTJD5121NT1G is a dual N-channel MOSFET from ON Semiconductor, featuring 60V drain-source voltage and 295mA continuous drain current. It is supplied in an SC-88 package.

The 2N7002DW-7-F is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a 60V drain-source breakdown voltage and 230mA continuous drain current in a compact SOT-363 package.

IAUC60N04S6N031HATMA1 is a 40V, 60A half-bridge N-channel power MOSFET array from Infineon's OptiMOS-6 series. It features a maximum on-resistance of 3.1mΩ at 10V Vgs and is housed in an 8-PowerVDFN (PG-TDSON-8-56) surface-mount package.