IRF3205PBF
Infineon
The Infineon IRF3205PBF is an N-Channel MOSFET with a 55V drain-source voltage and 98A drain current. It is housed in a TO-220AB package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation |
The Toshiba 2SK794 is a single N-Channel MOSFET transistor designed for various electronic applications. It offers a high breakdown voltage of 900V and a substantial power dissipation capability of 150W, making it suitable for power switching and amplification circuits.
Key electrical specifications include a minimum drain-source resistance of 2.5 Ohms. The component is RoHS3 compliant, indicating adherence to environmental standards for hazardous substances.
This MOSFET is presented as a guide for applications, but it is not designed for equipment requiring specialized quality and reliability, or for use in hazardous environments, the aerospace industry, or the medical field. Its specifications make it a component for general-purpose power electronics where high voltage handling is required.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 900V.
The power dissipation is 150W.
The minimum drain-source resistance is 2.5 Ohms.
Yes, the 2SK794 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.
