| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
77,320 pcs
|
77320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
33,497 pcs
|
33497 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20,073 pcs
|
20073 pcs | On Request | 1 | On Request | On Request | 2021+ | On Request | On Request | |
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
397 pcs
|
397 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The Infineon IRF3205PBF is a high-performance N-Channel MOSFET designed for various power applications. It features a maximum drain-source voltage of 55V and a continuous drain current of 98A, making it suitable for demanding tasks.
The MOSFET exhibits a low on-state resistance of 8 mOhms at 62A and 10V, ensuring efficient power transfer and minimizing heat generation. It utilizes Infineon's Hexfet® technology for enhanced performance.
Packaged in a standard TO-220AB case with Through-Hole (THT) mounting, the IRF3205PBF is designed for easy integration into electronic circuits. Its unipolar nature and N-channel enhancement mode operation make it a versatile component for power switching and amplification.
This MOSFET is rated for a gate-source voltage of 20V and has a power dissipation capability of 150W. It is supplied in a TUBE package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 55V.
The continuous drain current is 98A.
The on-state resistance is 8 mOhms at 62A, 10V.
The IRF3205PBF is in a TO-220AB package.
It is mounted using the THT (Through-Hole) method.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.