IRF3205PBF
Infineon
The Infineon IRF3205PBF is an N-Channel MOSFET with a 55V drain-source voltage and 98A drain current. It is housed in a TO-220AB package.
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation |
The Toshiba 2SK793 is an N-Channel MOSFET Transistor. It features a Drain-Source Voltage rating of 850V and a Power Dissipation capability of 150W. The device exhibits a Drain-Source Resistance of 2.5 Ohms.
This MOSFET is suitable for applications requiring high voltage and power handling. Its specifications make it a component for power switching and amplification circuits. The device has 3 terminals and is designed for general-purpose use, though not intended for specialized quality, reliability, hazardous environments, aerospace, or medical applications.
Additional specifications such as Gate Charge, Gate-Source Voltage, Continuous Drain Current, Rds On, and Vgs(th) are typically detailed in the manufacturer's datasheet. The product is classified under Transistors - FETs, MOSFETs - Arrays, with a specific subcategory of N-Channel MOSFETs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage of the 2SK793 is 850V.
The Power Dissipation of the 2SK793 is 150W.
The Drain-Source Resistance of the 2SK793 is 2.5 Ohms.
The Moisture Sensitivity Level (MSL) for the 2SK793 is 1 Unlimited.
