IRF3205PBF
Infineon
The Infineon IRF3205PBF is an N-Channel MOSFET with a 55V drain-source voltage and 98A drain current. It is housed in a TO-220AB package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation |
The 2SK539 is a transistor manufactured by Toshiba, designed for general electronic applications. It features a high breakdown voltage of 900V, making it suitable for circuits requiring robust voltage handling capabilities. The maximum power dissipation is rated at 150W, indicating its capacity for handling significant power loads.
This component has 3 terminals and is categorized under Transistors - Bipolar (BJT) - Single, Pre-Biased. While specific application details are not provided, its electrical characteristics suggest utility in power switching or amplification circuits where voltage breakdown is a critical parameter. The product is described as having RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are noted as unverified.
Information regarding package type, mounting, and standard quantity is not detailed in the available data. The product is not designed for specialized quality, high reliability, hazardous environments, aerospace, or medical fields, as per the manufacturer's disclaimer.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the 2SK539 transistor is 900V.
The maximum power dissipation for the 2SK539 is 150W.
The 2SK539 transistor has 3 terminals.
The minimum drain-source resistance of the 2SK539 is 2.5Ω.
