| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| FET Type |
The Renesas 2SK3114-AZ is a discontinued N-Channel Power Field-Effect Transistor (MOSFET) suitable for industrial switching applications. It features a drain-source voltage of 600V and a continuous drain current of 4A. The transistor has an on-resistance of 2.2 ohms.
This silicon Metal-oxide Semiconductor FET is constructed with a single element and comes in a flange mount package with 3 terminals. It was introduced in September 1998.
Key electrical characteristics include its N-Channel configuration and silicon semiconductor material. The part is RoHS3 compliant, has an MSL of 1, and is REACH unaffected. Due to its discontinued status, lead times and availability should be confirmed.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain current (I(D)) for the 2SK3114-AZ is 4A.
The drain-source voltage (V(DS)) for the 2SK3114-AZ is 600V.
The on-resistance (R(DS(on))) for the 2SK3114-AZ is 2.2ohm.
The 2SK3114-AZ has an N-Channel type.
The package style for the 2SK3114-AZ is FLANGE MOUNT.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.