| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,048 pcs
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2048 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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The STW5NA90 is a high-performance N-Channel Power Field-Effect Transistor manufactured by STMicroelectronics. Designed for demanding applications, this MOSFET features a robust 900V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 5.3A. Its low on-resistance of 2.5 ohms (Rds(on)) ensures efficient power handling and minimizes conduction losses.
This transistor utilizes Silicon Metal-oxide Semiconductor FET technology, making it suitable for various power switching and amplification tasks. The N-Channel enhancement mode operation provides reliable performance in power circuits. The component is typically housed in a TO-247 package, suitable for through-hole mounting and applications requiring good thermal dissipation.
Key electrical characteristics include its high breakdown voltage and significant current handling capacity, making it a versatile choice for power supply designs, motor control, and other high-voltage applications. Its construction is based on established semiconductor principles for dependable operation.
The drain-source breakdown voltage is 900V.
The continuous drain current is 5.3A.
The on-resistance is 2.5ohm.
The STW5NA90 has an N-Channel.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.