| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The ON Semiconductor MTP7N20E is an advanced TMOS E-FET designed to withstand high energy in avalanche and commutation modes. This N-Channel, Metal-oxide Semiconductor FET offers a drain-source voltage of 200V and a continuous drain current of 7A at 25°C with a Vgs of 10V. Its on-resistance is rated at 0.7 ohms under the same conditions.
This component is housed in a TO-220 package, suitable for through-hole mounting. The design emphasizes energy efficiency and includes a drain-to-source diode with a fast recovery time. It is intended for low voltage, high power applications where robust performance and reliability are critical.
The MTP7N20E is part of the TMOS E-FET family, known for its ability to handle demanding electrical conditions. Its silicon gate construction and Metal-oxide Semiconductor technology contribute to its performance characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MTP7N20E has a maximum drain-source voltage of 200V.
The continuous drain current is 7A at Vgs=10V, Ta=25°C.
The on-resistance is 0.7 Ohms when Vgs is 10V.
The MTP7N20E features an N-Channel.
The MTP7N20E is supplied in a TO-220 package.