IPP60R099CP
Infineon
The Infineon IPP60R099CP is an N-channel power MOSFET utilizing CoolMOS™ technology. It offers a breakdown voltage range of 500V to 950V and is designed for through-hole mounting.
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SK1045 is an N-Channel Enhancement MOSFET manufactured by Mitsubishi Electric. This component is designed for applications requiring high voltage and current handling capabilities, with a drain-source breakdown voltage of 900V and a continuous drain current of 5A.
It is housed in a TO-247S package, which is suitable for through-hole mounting. The MOSFET's N-channel enhancement mode operation makes it versatile for various switching and amplification tasks in power electronics circuits.
Key electrical characteristics include its 900V breakdown voltage and 5A continuous drain current, making it suitable for power supply circuits, motor control, and other high-power applications. Further specifications such as gate threshold voltage, on-resistance, and gate charge would typically be found in the detailed datasheet.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage for the 2SK1045 is 900V.
The continuous drain current (Id) at 25°C for the 2SK1045 is 5A.
The 2SK1045 is an N-Channel Enhancement MOSFET.
The 2SK1045 is supplied in a TO-247S package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.