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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF640 is a power MOSFET manufactured by Infineon Technologies, categorized under Transistors - FETs, MOSFETs - Single. This component is designed for various power switching applications.
Key electrical specifications include a drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 18A. The power dissipation (Pd) is rated at 31W. It also features a typical gate threshold voltage (Vgs(th)) of 4V at 250uA and a typical drain-source on-resistance (Rds(on)) of 130mΩ at 10V Vgs and 7.5A Id.
Additional electrical characteristics include an input capacitance (Ciss) of 1.32nF at 25V, a reverse transfer capacitance (Crss) of 130pF at 25V, and a total gate charge (Qg) of 23nC at 10V. The operating temperature range is from -55°C to +150°C.
The IRF640 comes in a TO-220 package and is suitable for through-hole mounting. This N-Channel MOSFET is a reliable component for power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 200V.
The continuous drain current is 18A.
The power dissipation is 31W.
The gate threshold voltage is 4V at 250uA.
The Rds(on) is 130mΩ at 10V Vgs and 7.5A Id.
The operating temperature range is -55 to +150°C.
The IRF640 is available in a TO-220 package.