| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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270 pcs
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270 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPP60R125C6XKSA1 is a high-performance N-Channel Power MOSFET utilizing Infineon's CoolMOS™ technology. This component is designed for demanding power applications, offering a breakdown voltage of 600V and a low on-resistance of 125 mOhm at a drain current of 25A.
The MOSFET features a typical gate charge of 36nC and an input capacitance of 1400pF, facilitating efficient switching characteristics. It is housed in a standard TO-220-3 package, suitable for through-hole mounting.
This device is well-suited for various power conversion applications where high efficiency and reliability are critical. Its robust design and specifications make it a valuable component for engineers designing power supplies, motor drives, and other power electronics systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.92 | $5.92 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 600V.
The on-resistance is 125 mOhm.
It is supplied in a TO-220-3 package.
It is mounted using the through-hole method.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is Unaffected.