HZM11NB1TR-E
Hitachi
The Renesas HZM11NB1TR-E is a Zener Diode designed for voltage regulation. It features a nominal Zener voltage of 10.66V and a power rating of 200mW.
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SJ49 from Hitachi is a P-Channel MOSFET designed for various electronic applications. This component features a breakdown voltage of 60V and a minimum drain-source on-resistance of 56mΩ. It can operate at temperatures up to 150°C.
The device has a maximum power dissipation rating of 35W, with a typical power dissipation of 2W. The MOSFET is housed in a package with 3 terminals.
This P-Channel MOSFET is suitable for applications requiring efficient switching and amplification. Its specifications make it a reliable choice for power management circuits and signal processing.
Key electrical characteristics include a 60V breakdown voltage and a low on-resistance, contributing to efficient power transfer. The operating temperature range ensures performance in demanding environments.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the 2SJ49 MOSFET is 60V.
The minimum drain-source resistance for the 2SJ49 is 56mΩ.
The maximum operating temperature for the 2SJ49 is 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
