| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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602,667 pcs
|
602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation |
The Renesas 2SJ363 is a P-Channel MOS FET suitable for low frequency power switching. This device offers a drain-to-source voltage of 30V and a continuous drain current of 6A. Its low on-resistance is rated at 50mΩ typical when measured at Vgs=10V and Id=7A. The power dissipation capability is 2.5W.
This MOSFET is designed to be driven by a 4V gate drive and can be operated from a 5V source. It comes in a compact SOT-89-3 surface mount package, making it suitable for space-constrained designs. The application focus is on low frequency power switching.
Key electrical characteristics include a gate-to-source voltage rating of 2.5V. The device is designed for general-purpose switching applications where efficiency and a small footprint are important.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
2.5V at 250µA test condition.
6A.
50mΩ maximum at Vgs=10V and Id=7A.
2.5W.
SOT-89-3 package.