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FQD12P10TF-NB82105 The On Semiconductor FQD12P10TF-NB82105 is a P-Channel MOSFET with a 100V drain-source breakdown voltage. It is supplied in a TO-252-3, DPak surface mount package.
Mfr Part #:

FQD12P10TF-NB82105

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor FQD12P10TF-NB82105 is a P-Channel MOSFET with a 100V drain-source breakdown voltage. It is supplied in a TO-252-3, DPak surface mount package.
✓ Total Stock: 9,000 pcs
$ Price Range: $0.99

FQD12P10TF-NB82105 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
7,000 pcs
On Request
7000 pcs On Request 1 On Request On Request 19+ On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
2,000 pcs
On Request
2000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQD12P10TF-NB82105 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Input Capacitance
Lead Style
Mounting Type
Power Dissipation
SVHC Present
Tape & Reel
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FQD12P10TF-NB82105 Description

Short technical summary and product information.

The FQD12P10TF-NB82105 is a P-Channel MOSFET manufactured by On Semiconductor. It features a drain-source breakdown voltage of 100V and a continuous drain current of 9.4A at 25°C.

 

Key electrical characteristics include a typical Rds On of 290 mOhm at 4.7A and 10V, a gate threshold voltage of 4V at 250µA, and an input capacitance of 800pF at 25V. The power dissipation is rated at 2.5W.

 

This MOSFET is designed for surface mounting and comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package. It is supplied on tape and reel.

 

Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status. Note that compliance data is currently unverified.

FQD12P10TF-NB82105 Quick Information

Product Type: MOSFET
Canonical Name: FQD12P10TF-NB82105 P-Channel MOSFET
Subcategory: P-Channel

FQD12P10TF-NB82105 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FQD12P10TF-NB82105 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQD12P10TF-NB82105 Features

  • 100V drain-source breakdown voltage.
  • 9.4A continuous drain current.
  • 290 mOhm typical Rds On.
  • TO-252-3 DPak surface mount package.
  • Supplied on tape and reel.

FQD12P10TF-NB82105 Applications

  • High-side load switching for power distribution.
  • DC-DC converter output stage switching.
  • Battery protection in portable electronics.
  • Motor control for low-power DC motors.

FQD12P10TF-NB82105 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 100V.

What is the continuous drain current?

The continuous drain current is 9.4A at 25°C.

What is the Rds On value?

The Rds On is typically 290 mOhm at 4.7A and 10V.

What is the gate threshold voltage?

The gate threshold voltage is 4V at 250µA.

What is the input capacitance?

The input capacitance is 800pF at 25V.

What is the power dissipation?

The power dissipation is 2.5W.

What package is this MOSFET supplied in?

This MOSFET is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

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