| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
129,143 pcs
|
129143 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Conflict Minerals | |
| Gate Charge | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present |
The STMicroelectronics STS7NF60L is an N-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 60V and can handle a continuous drain current (Id) of 7.5A at 25°C. The MOSFET exhibits a maximum on-resistance (Rds On) of 19.5mOhm at 3.5A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 1V at 250µA.
Key electrical characteristics include a maximum gate charge (Qg) of 34nC at 4.5V Vgs and a maximum gate-source voltage (Vgs) of ±16V. The device has a power dissipation of 2.5W (Tc).
Packaged in an 8-SOIC surface mount configuration, the STS7NF60L is designed for efficient integration into printed circuit boards. Its specifications make it suitable for power switching and amplification circuits where reliable performance and compact size are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
7.5A at 25°C case temperature.
19.5mOhm maximum at 3.5A, 10V.
1V maximum at 250µA.
34nC maximum at 4.5V.
2.5W at case temperature.
8-SOIC surface-mount package.