| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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16 pcs
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16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SJ352 is a P-Channel MOSFET produced by Hitachi Semiconductor. It is designed for low frequency power amplification and features a drain-source voltage of 200V, a drain current of 8A, and a channel dissipation of 100W. The device is packaged in a TO-3P package, suitable for through-hole mounting. It offers high power gain, excellent frequency response, and high-speed switching capabilities. Its wide safe operating area makes it suitable for various power switching applications in industrial and consumer electronics. The device complies with RoHS3 standards and has an MSL level of 1, indicating unlimited moisture sensitivity. It is ideal for use in power amplifiers, switching regulators, and other high-power circuits requiring robust performance and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage of the 2SJ352 is 200V.
Yes, the 2SJ352 is RoHS3 compliant.
The 2SJ352 is packaged in a TO-3P package.
The maximum drain current for the 2SJ352 is 8A.
The channel dissipation of the 2SJ352 is 100W.
