DF3A6.8LFU
Toshiba
The Toshiba DF3A6.8LFU is an epitaxial planar diode designed for ESD protection. It features a low total capacitance of 6.0 pF.
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2,220 pcs
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2220 pcs | On Request | 1 | On Request | On Request | / | On Request | On Request | |
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The Toshiba 2SJ106-Y is a P-Channel Junction Field-Effect Transistor (JFET) designed for various applications including audio frequency amplification, analog switching, constant current, and impedance conversion. It features a high breakdown voltage of 50V (V GDS) and a high input impedance with a gate cut-off current (I GSS) of 1.0 nA maximum at 30V (V GS).
This JFET exhibits a low drain-source on-resistance (R DS(ON)) of 270 Ω typical when conducting at -5 mA with a gate-source voltage (V GS) of -10V. The device has a drain current (I DSS) range of -1.2 mA to -14 mA at V DS = -10V and V GS = 0V. Its electrical characteristics also include a gate-source cut-off voltage (V GS(OFF)) between 0.3V and 6.0V, and a forward transfer admittance (Y fs) of 4.0 mS typical.
Packaged in a compact TO-236MOD (SC-59) surface-mount case, the 2SJ106-Y has a maximum power dissipation of 150 mW at 25°C ambient temperature. The junction temperature is rated up to 125°C, with a storage temperature range of -55°C to 125°C. Its small package and electrical properties make it suitable for space-constrained designs.
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum gate-drain voltage (V_GDS) is rated at 50 V, with a minimum breakdown voltage of 50 V under specified test conditions.
The component is housed in a SC-59 (also known as TO-236MOD or 2-3F1B) surface-mount package.
The device supports a maximum junction temperature (T_j) of 125 °C during operation.
The typical R_DS(ON) is 270 Ω when measured at a gate-source voltage of -10 V and a drain current of -5 mA.
The transistor can dissipate up to 150 mW of power at an ambient temperature of 25 °C.
