| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,960 pcs
|
1960 pcs | On Request | 1 | On Request | On Request | 1112+ | On Request | On Request |
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The Toshiba DF3A6.8LFU is an epitaxial planar diode designed for protecting electronic circuits against electrostatic discharge (ESD). This device is suitable for general electronics applications and offers a low total capacitance of 6.0 pF (typical) at 1 MHz and 0V reverse voltage.
Key electrical characteristics include a Zener voltage of 6.8V (nominal) at 5mA, a maximum power dissipation of 200mW at 25°C, and a maximum storage temperature range of -55°C to 125°C. The diode also exhibits a low reverse current of 0.5 µA maximum at 5V.
Packaged in a compact 1-2P1A surface mount package, the DF3A6.8LFU helps reduce part count and mounting costs. It meets IEC61000-4-2 contact discharge ESD immunity levels up to 18 kV.
Toshiba emphasizes that users must ensure their designs comply with safety standards and operate devices within specified ranges to prevent malfunction or failure that could lead to injury or property damage.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal zener voltage is 6.8 V, with a minimum of 6.5 V and maximum of 7.1 V at 5 mA.
200 mW at 25 °C ambient temperature.
18 kV contact discharge per IEC61000-4-2.
It is offered in a 1-2P1A package.
0.5 µA at a reverse voltage of 5 V.
-55 °C to 125 °C.
6.0 pF typical at 0 V reverse bias and 1 MHz.