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19 pcs
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19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SD799 is a silicon NPN power transistor designed for applications requiring high DC current gain. It comes in a standard TO-220 package, facilitating through-hole mounting.
Key electrical specifications include a collector-emitter voltage (VCEO) of 400V and a collector-base voltage (VCBO) of 600V. The device can handle a continuous collector current (IC) of up to 6A and a base current (IB) of 1A. Its collector dissipation (PC) is rated at 30W at 25°C case temperature. The transistor exhibits a high DC current gain (hFE) of 600 at IC=2A and 25°C.
Applications for the 2SD799 include igniter circuits and high voltage switching tasks. Its robust specifications make it suitable for demanding power applications where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SD799 is 400V.
The maximum collector current (IC) for the 2SD799 is 6A.
The DC current gain (hFE) of the 2SD799 at IC=2A and VCE=2V is a minimum of 600.
The 2SD799 is supplied in a TO-220 package.
