| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC1419 from Hitachi is a Silicon NPN Power Transistor designed for medium power amplifier applications. This component comes in a TO-220 package, facilitating through-hole mounting.
Key electrical characteristics include a collector-emitter voltage of 50V, a continuous collector current of 2A, and a peak collector current of 3A. The device offers a DC current gain (hFE) ranging from 35 to 320 at 1A collector current and 4V VCE. Its transition frequency (fT) is 5MHz at 0.5A collector current and 10V VCE.
Absolute maximum ratings specify a collector-base voltage of 50V and an emitter-base voltage of 5V. The maximum collector power dissipation is 20W at 25℃ (TC), with a junction temperature limit of 150℃ and a storage temperature range of -55℃ to 150℃.
This transistor is suitable for general-purpose amplification tasks where medium power handling is required. Its TO-220 package is standard for power applications requiring heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the 2SC1419 is 50V.
The maximum continuous collector current (IC) for the 2SC1419 is 2A.
The 2SC1419 transistor comes in a TO-220 package.
The DC current gain (hFE) for the 2SC1419 ranges from 35 to 320 when measured at 1A collector current and 4V VCE.
The transition frequency (fT) of the 2SC1419 is 5MHz, measured at 0.5A collector current and 10V VCE.