| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD439 is a silicon NPN power transistor manufactured by Telefunken, suitable for amplifier and switching applications. It is housed in a TO-126 package.
Key electrical characteristics include a maximum collector-emitter voltage of 60V and a continuous collector current rating of 4A. The device offers a typical DC current gain (hFE) ranging from 40 to 475 at 1V/500mA. Its collector-emitter saturation voltage is a maximum of 0.8V at 3A/0.3A, and the base-emitter voltage is typically 1.1V at 1V/2A.
Thermal specifications include a maximum junction temperature of 150°C and a storage temperature range of -55°C to 150°C. The power dissipation is rated at 1.25W at 25°C ambient temperature.
This transistor is designed for general-purpose amplification and switching tasks where its voltage and current ratings are appropriate. The TO-126 package is a common choice for medium-power applications requiring a through-hole mounting solution.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BD439 is 60V.
The continuous collector current (IC) rating for the BD439 is 4A.
The BD439 transistor is supplied in a TO-126 package.
The maximum operating junction temperature (TJ) for the BD439 is 150°C.
The typical DC current gain (hFE) of the BD439 at 1V/500mA is between 40 and 475.
The collector-emitter saturation voltage (VCE(sat)) for the BD439 is a maximum of 0.8V at 3A/0.3A.
The transition frequency (fT) of the BD439 is typically 3MHz at 1V/250mA.