| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Power Dissipation |
The 2SD586 from NEC is an NPN bipolar junction transistor (BJT) suitable for power amplifier applications. It is housed in a TO-3PN package, indicating through-hole mounting.
Key electrical characteristics include a maximum Collector-Emitter Voltage (Vce) of -100V and a maximum Collector Current (Ic) of -5A, with a power dissipation rating of 30W at 25°C. The typical DC Current Gain (hFE) is 15000, and the typical transition frequency (fT) is 120MHz. The typical output capacitance (Cob) is 200pF.
This transistor is often used in audio amplifiers and other power amplification circuits where its voltage and current handling capabilities are beneficial. Its complementary type is the 2SB616.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-100V
-5A
30W
15000
TO-3PN