| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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958 pcs
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958 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Toshiba TK7A60W5 is an N-Channel Silicon MOSFET utilizing the DTMOS structure. It is designed for applications such as switching voltage regulators and motor drivers.
Key electrical characteristics include a maximum drain-source voltage of 600V and a continuous drain current of 7A. The device features a low drain-source on-resistance of 0.54 Ohms (typical) and a fast reverse recovery time of 75 ns (typical). The gate threshold voltage (Vth) ranges from 3V to 4.5V under specific test conditions.
This MOSFET is housed in a TO-220SIS package, suitable for through-hole mounting. It has a maximum channel temperature of 150°C and a storage temperature range of -55°C to 150°C. Thermal resistance from channel to case is 4.17 °C/W, and from channel to ambient is 62.5 °C/W.
The device is rated for a maximum power dissipation of 30W at 25°C case temperature. It also offers a single-pulse avalanche energy rating of 92 mJ.
600V.
TO-220SIS through-hole package.
Maximum channel temperature 150°C, storage temperature -55 to 150°C.
0.54Ω typical.
3 to 4.5V at VDS=10V, ID=0.35mA.
2000V RMS.
30W at Tc=25°C.