| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Storage Temperature |
The Toshiba 2SD551 is an NPN power transistor housed in a TO-3 package, designed for audio frequency power amplifier applications. It offers a wide area of safe operation.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 150V and a continuous collector current (IC) of 12A, with a peak collector current (ICM) of 15A. The power dissipation (PC) is rated at 100W at 25°C case temperature. The junction temperature (Tj) can reach up to 150°C, with storage temperatures ranging from -55°C to 150°C.
This transistor exhibits a minimum collector-emitter breakdown voltage (V(BR)CEO) of 150V and a minimum emitter-base breakdown voltage (V(BR)EBO) of 5V. The collector-emitter saturation voltage (VCEsat) is a maximum of 2.5V at 5A collector current and 0.5A base current. The DC current gain (hFE) ranges from 40 to 140 at 1A collector current and 5V collector-emitter voltage.
Additional specifications include a collector output capacitance (COB) of 250pF at 1MHz and a transition frequency (fT) of 15MHz at 1A collector current and 5V collector-emitter voltage. The 2SD551 is a complement to the 2SB681 type transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SD551 is 150V.
The continuous collector current (IC) rating of the 2SD551 is 12A.
The power dissipation (PC) of the 2SD551 is 100W at 25°C case temperature.
The DC current gain (hFE) of the 2SD551 is typically between 40 and 140 at 1A collector current and 5V collector-emitter voltage.
The 2SD551 is supplied in a TO-3 package.
