| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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410 pcs
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410 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Automotive Grade | |
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The 2SC1317 is a Silicon NPN epitaxial planar transistor manufactured by Mitsubishi Electric. It is designed for applications requiring low-frequency power amplification and driver amplification. A key feature is its low collector-emitter saturation voltage (VCE(sat)), making it efficient in power applications.
This transistor is the complementary pair to the 2SA0719. It has an absolute maximum collector-emitter voltage (VCEO) of 25V and a continuous collector current (IC) of 0.5A, with a peak collector current (ICP) of 1A. The maximum collector power dissipation (PC) is 625mW at Ta = 25°C. The junction temperature can reach up to 150°C, with storage temperatures ranging from -55°C to 150°C.
Electrical characteristics include a forward current transfer ratio (hFE) ranging from 85 to 340 at IC = 150mA and VCE = 10V. The collector-emitter saturation voltage is typically between 0.35V and 0.60V at IC = 300mA and IB = 30mA. The transition frequency (fT) is 200 MHz at VCB = 10V and IE = -50mA. Collector output capacitance (Cre) is between 6pF and 15pF at VCB = 10V and f = 1MHz.
The 2SC1317 comes in a TO-92B-B1 package and is suitable for through-hole mounting. It complies with the RoHS Directive (EU 2002/95/EC).
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage with base open is 25V.
The maximum continuous collector current is 0.5A, with a peak collector current rating of 1A.
At VCE=10V and IC=150mA, hFE ranges from 85 to 340. At IC=500mA, the minimum hFE is 40.
The minimum transition frequency is 200MHz.
The 2SC1317 comes in the TO-92B-B1 through-hole package.
The collector power dissipation is 625mW at 25°C ambient temperature.